What is the minimum threshold voltage in millivolts that can beused for an NMOS FET to achieve an off current, Ioff , when Vgs =0V of no more than 0.93nA per W/L at 300°K? Assume that this MOSFEThas a steep retrograde body doping profile with a maximum depletionregion thickness of Wdmax = 54nm, and an effective oxide thickness,Toxe, of 33 angstroms. Use kT/q = 26mV at 300°K.