Question: When alloying 2 semiconductors AC and BC to form an alloy semiconductor A1xB,C, the bandgap of the alloy will deviate slightly from linearity and can

 When alloying 2 semiconductors AC and BC to form an alloy

When alloying 2 semiconductors AC and BC to form an alloy semiconductor A1xB,C, the bandgap of the alloy will deviate slightly from linearity and can be expressed as Eg(A1-XB,C) = xEg(BC) + (1-x)g(AC) bx(1 - x) where b is known as the bowing parameter. Consider an alloy semiconductor Ini-xAlxN with a bowing parameter b=4.7. (a) Plot a graph showing the composition dependence of the bandgap for Ini-xAlxN from x=0 to 1. (Eg(InN)=0.7 eV and Eg(AIN)=6.2 eV). (b) From the graph find the composition of an Ini-xAlxN alloy with a bandgap of 2.0 eV. (c) Will a light beam with wavelength 550 nm be absorbed or transmitted by this alloy? Estimate the emission wavelength you would expect for a light-emitting diode made out of this alloy. (d) ZnO (Zinc oxide), a II-VI compound semiconductor has conduction-band effective mass me=0.27mo at the zone center and the dielectric constant is = 3.75. Use the Bohr model of the hydrogenic ground state to estimate the binding energy Ed and radius ad of the orbit of a shallow dopant in Zno. (e) Find the density of donors Nd at which the Bohr orbits begin to overlap. When alloying 2 semiconductors AC and BC to form an alloy semiconductor A1xB,C, the bandgap of the alloy will deviate slightly from linearity and can be expressed as Eg(A1-XB,C) = xEg(BC) + (1-x)g(AC) bx(1 - x) where b is known as the bowing parameter. Consider an alloy semiconductor Ini-xAlxN with a bowing parameter b=4.7. (a) Plot a graph showing the composition dependence of the bandgap for Ini-xAlxN from x=0 to 1. (Eg(InN)=0.7 eV and Eg(AIN)=6.2 eV). (b) From the graph find the composition of an Ini-xAlxN alloy with a bandgap of 2.0 eV. (c) Will a light beam with wavelength 550 nm be absorbed or transmitted by this alloy? Estimate the emission wavelength you would expect for a light-emitting diode made out of this alloy. (d) ZnO (Zinc oxide), a II-VI compound semiconductor has conduction-band effective mass me=0.27mo at the zone center and the dielectric constant is = 3.75. Use the Bohr model of the hydrogenic ground state to estimate the binding energy Ed and radius ad of the orbit of a shallow dopant in Zno. (e) Find the density of donors Nd at which the Bohr orbits begin to overlap

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