$($ Which is FALSE for PVD$?$

$($a$)$ Sputtering can deposit a high melting point material; $($b$)$ sputtering cannot deposit the emission layer of organic light$-$emitting displays; $($c$)$ Both sputtering and evaporation require a high vacuum for deposition torr$)$; $($d$)$ Evaporation can deposit a tungsten film by PVD$.$

$($ Which is FALSE for electromigration?

$($a$)$ It is common for Al to diffuse into a Si semiconductor; $($b$)$ Silicon nitrile cannot stop metallic ion diffusion. $($c$)$ TiN can reduce the electromigration effect; $($d$)$ The diffused metallic atoms can form a spike, potentially shorting the circuit.

$()$ Which is TRUE for copper electrodes? $($a$)$ Copper electrodes is commonly deposited through vapor deposition; $($b$)$ Electrochemical plating is an etching process to remove copper. $($c$)$ Copper electrodes are hard to remove by RIE; $($d$)$ Plasma with chlorine gas is a good formula for etching copper.

$()$ Which is TRUE for CMP$?$

$($a$)$ SiO$2$ prefers to use an acidic solution with alumina for $CMP$; $($b$)$ KOH is a common chemical to control $pH$ values in acidic solution; $($c$)$ Drain$/$source electrodes may be short when the annealing timer is over thermal budget; $($d$)$ Deposition rate of the dopants decide the thermal annealing time and temperature.

$()$ Which approach is used to investigate electrical defects in a device?

$($a$)$ Dark field optical microscopy; $($b$)$ Atomic Force Microscopy; $($c$)$ Fourier$-$transform infrared microscopy; $($d$)$ Electron beam investigation.