You have a Si p*-n junction with N=10/cm' and No = 10/cm'. On the n- side...

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You have a Si p*-n junction with N₁=10¹/cm' and No = 10"/cm'. On the n- side of the junction the mobility of holes, pa, is 250 cm²/V-s and lifetime, T., is 10 µs. In the depletion region the lifetime, T, is 2 us. Assume n=10¹0 /cm', 300 K, &, 11.9 So, and series resistance is very low for all considered currents. a. At what voltage will the p-n junction switch from current dominated by recombination to diffusion (in V)? Assume recombination is constant in the depletion region, and the depletion width in forward bias does not change from zero bias. b. What is the ideality factor for diffusion currents? C. What is the ideality factor for recombination currents? XE7 At what voltage will the p-n junction switch from current dominated by diffusion to high level injection (in V)? Assume the injected carriers need to be 10 times higher than the doping for this to happen. d You have a Si p*-n junction with N₁=10¹/cm' and No = 10"/cm'. On the n- side of the junction the mobility of holes, pa, is 250 cm²/V-s and lifetime, T., is 10 µs. In the depletion region the lifetime, T, is 2 us. Assume n=10¹0 /cm', 300 K, &, 11.9 So, and series resistance is very low for all considered currents. a. At what voltage will the p-n junction switch from current dominated by recombination to diffusion (in V)? Assume recombination is constant in the depletion region, and the depletion width in forward bias does not change from zero bias. b. What is the ideality factor for diffusion currents? C. What is the ideality factor for recombination currents? XE7 At what voltage will the p-n junction switch from current dominated by diffusion to high level injection (in V)? Assume the injected carriers need to be 10 times higher than the doping for this to happen. d

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