You have been hired in a company that is dedicated to manufacturing FET transistors of different types, for which your boss has asked you to be able to identify some characteristic elements, construction details and other associated elements, so that in the near future you can be part of the circuit design team that uses this type of transistor.

To do this, your boss has asked you to explain a set of points that will allow the staff to exercise their knowledge in this regard, prior to the final design that they will be in charge of.

Then answer:

Firstly, during the manufacturing process of the transistors on a silicon wafer there was an identification problem, for which a sample of the cross section of a transistor has been taken, for which you are asked to identify the type of constructed transistor and its different parts, as shown in figure 1. 

2. In order to test the quality of the manufactured transistors, you are asked to calculate the values of ID, VGS, VDS, VS, VG and VD of a fixed bias circuit for FET transistor. What would you say is the main operational difference in this type of polarization, compared to voltage division polarization?

 

3.Finally, you will be asked what the main difference is between a depletion MOSFET transistor and an enrichment one, considering the type of substrate on which it is manufactured (type N or P).

 

EVALUATION INDICATORS

Recognizes the construction, characteristics and types of FET field effect transistors, with the aim of establishing the way in which the different types are characterized and constituted in certain contexts.

Differentiates the polarization forms of the FET, to recognize the particularities of the polarization options in certain contexts.

Distinguishes the different types of MOSFET transistors, in order to establish the differences in operation in a certain context.

Transcribed Image Text:

SiO P+ P Substrato tipo N Al P+ SiO P+ P Substrato tipo N Al P+