You have developed a new light absober

material $,$ mobility $=420c{m}^2{V}^{-1}{s}^{-}$

$.$ You deposit a thick$)$ layer

of this material on a store$-$bought electron selctive

layer $($thickness $300nm,n_e=3{10}^{20}c{m}^3,$ mobility

$=4c{m}^2{V}^{-1}{s}^{-1})$ on glass substrate. The cell is

completed by depositing highly conducting front

metal contact layers $($thickness $14m,$ width $=30$

$m,$ length $($into plane of drawing$)=2cm).$ The

device is as shown in the figure.

$($a$)$ Determine the sheet resistance $($in ${}^{-1})$ of

the electron selective layer. Restrict your answer to

$2$ decimal places.

Answer:

Answer

From simulation, you determine that your solar cell

should operate at $35m\frac{A}{c}{m}^2$ and $0\mathrm{.}62V$ at the

maximum power point. Calculate the fraction of

power lost due to emitter sheet resistance.

Answer:

Answer

No other better emitter is available from the

manufacturer. What parameter can you change, to

reduce the power loss associated with sheet

resistance to below $4\%$ of output power?