A drift current density of (120 mathrm{~A} / mathrm{cm}^{2}) is established in n-type silicon with an applied

Question:

A drift current density of $120 \mathrm{~A} / \mathrm{cm}^{2}$ is established in n-type silicon with an applied electric field of $18 \mathrm{~V} / \mathrm{cm}$. If the electron and hole mobilities are $\mu_{n}=1250 \mathrm{~cm}^{2} / \mathrm{V}-\mathrm{s}$ and $\mu_{p}=450 \mathrm{~cm}^{2} / \mathrm{V}-\mathrm{s}$, respectively, determine the required doping concentration.

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