A high-frequency bipolar transistor is biased at (I_{C Q}=0.4 mathrm{~mA}) and has parameters (C_{mu}=0.075 mathrm{pF}, f_{T}=2 mathrm{GHz}),

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A high-frequency bipolar transistor is biased at $I_{C Q}=0.4 \mathrm{~mA}$ and has parameters $C_{\mu}=0.075 \mathrm{pF}, f_{T}=2 \mathrm{GHz}$, and $\beta_{o}=120$.

(a) Determine $C_{\pi}$ and $f_{\beta}$.

(b) Determine $\left|h_{f e}\right|$ at (i) $f=10 \mathrm{MHz}$, (ii) $f=20 \mathrm{MHz}$, and (iii) $f=50 \mathrm{MHz}$.

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Microelectronics Circuit Analysis And Design

ISBN: 9780071289474

4th Edition

Authors: Donald A. Neamen

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Question Posted: May 06, 2024 09:02 AM

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A high-frequency bipolar transistor is biased at (I_{C Q}=0.4 mathrm{~mA}) and has parameters (C_{mu}=0.075 mathrm{pF}, f_{T}=2 mathrm{GHz}),

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Microelectronics Circuit Analysis And Design

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