A JFET circuit is biased with the current source in Figure P10.74. The transistor parameters are: (I_{D

Question:

A JFET circuit is biased with the current source in Figure P10.74. The transistor parameters are: $I_{D S S}=4 \mathrm{~mA}, V_{P}=-4 \mathrm{~V}$, and $\lambda=0$. Design the circuit such that $I_{O}=2 \mathrm{~mA}$. What is the minimum value of $V_{D}$ such that the transistor is biased in the saturation region?

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