Consider the circuit in Figure 3.39 with a depletion load. Assume the circuit is biased at \(V_{D D}=3.3 \mathrm{~V}\), and assume transistor threshold voltages of \(V_{T N D}=0.4 \mathrm{~V}\) and \(V_{T N L}=-0.75 \mathrm{~V}\). Also assume \(k_{n}^{\prime}=80 \mu \mathrm{A} / \mathrm{V}^{2}\). Design the circuit such that \(V_{O}=0.05 \mathrm{~V}\) when \(V_{I}=3.3 \mathrm{~V}\) and that the maximum power dissipation is \(150 \mu \mathrm{W}\).

Figure 3.39:-

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VDD IDL + ML. VDSL IDD Vo Load MD VDSD Driver + VGSD Figure 3.39 Circuit with depletion-load device and NMOS driver