The BiCMOS circuit shown in Figure P11.82 is equivalent to a pnp bipolar transistor with an infinite input impedance. The bias current is \(I_{Q}=0.5 \mathrm{~mA}\). The MOS transistor parameters are \(V_{T P}=-0.5 \mathrm{~V}, K_{p}=0.7 \mathrm{~mA} / \mathrm{V}^{2}\), and \(\lambda=0\), and the BJT parameters are \(\beta=180, V_{B E}\) (on) \(=0.7 \mathrm{~V}\), and \(V_{A}=\infty\).

(a) Sketch the small-signal equivalent circuit.

(b) Calculate the small-signal parameters for each transistor.

(c) Determine the small-signal voltage gain \(A_{v}=v_{o} / v_{i}\) for (i) \(R_{L}=10 \mathrm{k} \Omega\) and (ii) \(R_{L}=100 \mathrm{k} \Omega\).

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v, I + + 2.5 V +5 V 10+ Ro M1 HH Cc Figure P11.82 R = 8 Q2