Compute the ShockleyQueisser bound on V oc for a silicon cell with band gap 1.1 eV at

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Compute the Shockley–Queisser bound on V_oc for a silicon cell with band gap 1.1 eV at temperature T = 300 K. Model the Sun as a black body at 6000 K.

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The Physics of Energy

ISBN: 978-1107016651

1st edition

Authors: Robert L. Jaffe, Washington Taylor

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Question Posted: Mar 12, 2020 11:03 AM

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Compute the ShockleyQueisser bound on V oc for a silicon cell with band gap 1.1 eV at

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The most general efficiency limit is the thermodynamic efficiency limit In this limit the photovolta...View the full answer

The Physics of Energy

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