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computer science
systems analysis and design 12th
Questions and Answers of
Systems Analysis And Design 12th
Describe the general characteristics of the equivalent circuits that apply to the low-frequency, midband, and high-frequency ranges.
Describe what is meant by a system transfer function in the \(s\)-domain.
What is the criterion that defines a corner, or \(3 \mathrm{~dB}\), frequency?
Describe what is meant by the phase of the transfer function.
Describe the time constant technique for determining the corner frequencies.
Describe the general frequency response of a coupling capacitor, a bypass capacitor, and a load capacitor.
Sketch the expanded hybrid- \(\pi\) model of the BJT.
Describe the short-circuit current gain versus frequency response of a BJT and define the cutoff frequency.
Describe the Miller effect and the Miller capacitance.
What effect does the Miller capacitance have on the amplifier bandwidth?
Sketch the expanded small-signal equivalent circuit of a MOSFET.
Define the cutoff frequency for a MOSFET.
What is the major contribution to the Miller capacitance in a MOSFET?
Why is there not a Miller effect in a common-base circuit?
Describe the configuration of a cascode amplifier.
Why is the bandwidth of a cascode amplifier larger, in general, than that of a simple common-emitter amplifier?
Why is the bandwidth of the emitter-follower amplifier the largest of the three basic BJT amplifiers?
(a) Determine the voltage transfer function \(T(s)=V_{o}(s) / V_{i}(s)\) for the circuit shown in Figure P7.1. (b) Sketch the Bode magnitude plot and determine the corner frequency. (c) Determine the
Repeat Problem 7.1 for the circuit in Figure P7.2.Data From Problem 7.1:-(a) Determine the voltage transfer function \(T(s)=V_{o}(s) / V_{i}(s)\) for the circuit shown in Figure P7.1. (b) Sketch the
Consider the circuit in Figure P7.3. (a) Derive the expression for the voltage transfer function \(T(s)=V_{o}(s) / V_{i}(s)\). (b) What is the time constant associated with this circuit? (c) Find the
Consider the circuit in Figure P7.4 with a signal current source. The circuit parameters are \(R_{i}=30 \mathrm{k} \Omega, R_{P}=10 \mathrm{k} \Omega, C_{S}=10 \mu \mathrm{F}\), and \(C_{P}=50
Consider the circuit shown in Figure P7.5. (a) What is the value of the voltage transfer function \(V_{o} / V_{i}\) at very low frequencies? (b) Determine the voltage transfer function at very high
(a) Derive the voltage transfer function \(T(s)=V_{o}(s) / V_{i}(s)\) for the circuit shown in Figure 7.10, taking both capacitors into account.(b) Let \(R_{S}=R_{P}=10 \mathrm{k} \Omega, C_{S}=1 \mu
A voltage transfer function is given by \(T(f)=1 /\left(1+j f / f_{T}\right)^{3}\). (a) Show that the actual response at \(f=f_{T}\) is approximately \(9 \mathrm{~dB}\) below the maximum value. What
Sketch the Bode magnitude plots for the following functions:(a) \(T_{1}(s)=\frac{s}{s+100}\)(b) \(T_{2}(s)=\frac{5}{s / 2000+1}\)(c) \(T_{3}(s)=\frac{200(s+10)}{(s+1000)}\)
(a) (i) Sketch the Bode magnitude plot for the function\[T(s)=\frac{10(s+10)(s+100)}{(s+1)(s+1000)}\](ii) What are the corner frequencies?(iii) Determine \(|T(\omega)|\) for \(\omega \rightarrow
(a) Determine the transfer function corresponding to the Bode plot of the magnitude shown in Figure P7.10. (b) What is the actual gain at (i) \(\omega=50 \mathrm{rad} / \mathrm{s}\), (ii)
Consider the circuit shown in Figure 7.15 with parameters \(R_{S}=0.5 \mathrm{k} \Omega\), \(r_{\pi}=5.2 \mathrm{k} \Omega, g_{m}=29 \mathrm{~mA} / \mathrm{V}\), and \(R_{L}=6 \mathrm{k} \Omega\).
For the circuit shown in Figure P7.12, the parameters are \(R_{1}=10 \mathrm{k} \Omega\), \(R_{2}=10 \mathrm{k} \Omega, R_{3}=40 \mathrm{k} \Omega\), and \(C=10 \mu \mathrm{F}\). (a) What is the
The circuit shown in Figure 7.10 has parameters \(R_{S}=1 \mathrm{k} \Omega, R_{P}=10 \mathrm{k} \Omega\), and \(C_{S}=C_{P}=0.01 \mu \mathrm{F}\). Using PSpice, plot the magnitude and phase of the
The transistor shown in Figure P7.14 has parameters \(V_{T N}=0.4 \mathrm{~V}\), \(K_{n}=0.4 \mathrm{~mA} / \mathrm{V}^{2}\), and \(\lambda=0\). The transistor is biased at \(I_{D Q}=0.8
Consider the circuit shown in Figure P7.15. The transistor has parameters \(\beta=120\) and \(V_{A}=\infty\). The circuit bandwidth is \(800 \mathrm{MHz}\) and the quiescent collector-emitter voltage
The transistor in the circuit shown in Figure P7.16 has parameters \(V_{T N}=0.4 \mathrm{~V}, K_{n}=50 \mu \mathrm{A} / \mathrm{V}^{2}\), and \(\lambda=0.01 \mathrm{~V}^{-1}\). (a) Derive the
For the common-emitter circuit in Figure P7.17, the transistor parameters are: \(\beta=100, V_{B E}(\) on \()=0.7 \mathrm{~V}\), and \(V_{A}=\infty\). (a) Calculate the lower corner frequency. (b)
(a) Design the circuit shown in Figure P7.18 such that \(I_{D Q}=0.8 \mathrm{~mA}\), \(V_{D S Q}=3.2 \mathrm{~V}, R_{\text {in }}=160 \mathrm{k} \Omega\), and \(f_{L}=16 \mathrm{~Hz}\). The
The transistor in the circuit in Figure P7.19 has parameters \(K_{n}=\) \(0.5 \mathrm{~mA} / \mathrm{V}^{2}, V_{T N}=1 \mathrm{~V}\), and \(\lambda=0\).(a) Design the circuit such that \(I_{D Q}=\)
The transistor in the circuit in Figure P7.20 has parameters \(K_{p}=\) \(0.5 \mathrm{~mA} / \mathrm{V}^{2}, V_{T P}=-2 \mathrm{~V}\), and \(\lambda=0\). (a) Determine \(R_{o}\). (b) What is the
For the circuit in Figure P7.21, the transistor parameters are \(\beta=120\), \(V_{B E}(\) on \()=0.7 \mathrm{~V}\), and \(V_{A}=50 \mathrm{~V}\). (a) Design a bias-stable circuit such that \(I_{E
(a) For the circuit shown in Figure P7.22, write the voltage transfer function \(T(s)=V_{o}(s) / V_{i}(s)\). Assume \(\lambda>0\) for the transistor. (b) What is the expression for the time
Consider the circuit shown in Figure P7.23. (a) Write the transfer function \(T(s)=V_{o}(s) / V_{i}(s)\). Assume \(\lambda=0\) for the transistor. (b) Determine the expression for the time constant
The parameters of the transistor in the circuit in Figure P7.24 are \(V_{B E}(\) on \()=0.7 \mathrm{~V}, \beta=100\), and \(V_{A}=\infty\). (a) Determine the quiescent and small-signal parameters of
A capacitor is placed in parallel with \(R_{L}\) in the circuit in Figure P7.24. The capacitance is \(C_{L}=10 \mathrm{pF}\). The transistor parameters are the same as given in Problem 7.24. (a)
The parameters of the transistor in the circuit in Figure P7.26 are \(K_{p}=\) \(1 \mathrm{~mA} / \mathrm{V}^{2}, V_{T P}=-1.5 \mathrm{~V}\), and \(\lambda=0\). (a) Determine the quiescent and
A MOSFET amplifier with the configuration in Figure P7.27 is to be designed for use in a telephone circuit. The magnitude of the voltage gain should be 10 in the midband range, and the midband
The circuit in Figure P7.28 is a simple output stage of an audio amplifier. The transistor parameters are \(\beta=200, V_{B E}(\) on \()=0.7 \mathrm{~V}\), and \(V_{A}=\infty\). Determine \(C_{C}\)
Reconsider the circuit in Figure P7.28. The transistor parameters are \(\beta=120, V_{B E}\) (on) \(=0.7 \mathrm{~V}\), and \(V_{A}=\infty\). The circuit parameters are \(V^{+}=\) \(3.3 \mathrm{~V}\)
The parameters of the transistor in the circuit in Figure P7.30 are \(\beta=100\), \(V_{B E}\) (on) \(=0.7 \mathrm{~V}\), and \(V_{A}=\infty\). The time constant associated with \(C_{C 1}\) is a
Consider the circuit shown in Figure P7.30. The time constant associated with \(C_{C 2}\) is a factor of 100 larger than the time constant associated with \(C_{C 1}\). (a) Determine \(C_{C 1}\) such
Consider the circuit shown in Figure P7.32. The transistor parameters are \(\beta=120, V_{B E}\) (on) \(=0.7 \mathrm{~V}\), and \(V_{A}=\infty\). (a) Find \(R_{C}\) such that \(V_{C E Q}=2.2
For the transistor in the circuit in Figure P7.33, the parameters are: \(K_{n}=0.5 \mathrm{~mA} / \mathrm{V}^{2}, V_{T N}=0.8 \mathrm{~V}\), and \(\lambda=0\). (a) Design the circuit such that \(I_{D
Figure P7.34 shows the ac equivalent circuit of two identical commonsource circuits in cascade. The transistor parameters are \(K_{n 1}=K_{n 2}=\) \(0.8 \mathrm{~mA} / \mathrm{V}^{2},
The common-emitter circuit in Figure P7.35 has an emitter bypass capacitor. (a) Derive the expression for the small-signal voltage gain \(A_{v}(s)=V_{o}(s) / V_{i}(s)\). Write the expression in a
Consider the circuit in Figure P7.35. The bias voltages are \(V^{+}=3 \mathrm{~V}\) and \(V^{-}=-3 \mathrm{~V}\). The transistor parameters are \(\beta=90, V_{E B}(\mathrm{on})=0.7 \mathrm{~V}\) and
Consider the common-base circuit in Figure 7.33 in the text. The transistor parameters are \(\beta=90, V_{E B}(\mathrm{on})=0.7 \mathrm{~V}\), and \(V_{A}=\infty\). A load capacitance of \(C_{L}=3
Consider the circuit shown in Figure 7.25(a). The bias voltages are changed to \(V^{+}=3 \mathrm{~V}\) and \(V^{-}=-3 \mathrm{~V}\). The load resistor is \(R_{L}=20 \mathrm{k} \Omega\). The
For the circuit in Figure P7.39, the transistor parameters are: \(K_{n}=\) \(0.5 \mathrm{~mA} / \mathrm{V}^{2}, V_{T N}=2 \mathrm{~V}\), and \(\lambda=0\). Determine the maximum value of \(C_{L}\)
The parameters of the transistor in the circuit in Figure P7.40 are \(\beta=100\), \(V_{B E}\) (on) \(=0.7 \mathrm{~V}\), and \(V_{A}=\infty\). Neglect the capacitance effects of the transistor. (a)
In the common-source amplifier in Figure 7.25(a) in the text, a source bypass capacitor is to be added between the source terminal and ground potential. The circuit parameters are \(R_{S}=3.2
Consider the common-base circuit in Figure P7.42. Choose appropriate transistor parameters. (a) Using a computer analysis, generate the Bode plot of the voltage gain magnitude from a very low
For the common-emitter circuit in Figure P7.43, choose appropriate transistor parameters and perform a computer analysis. Generate the Bode plot of the voltage gain magnitude from a very low
For the multitransistor amplifier in Figure P7.44, choose appropriate transistor parameters. The lower \(3 \mathrm{~dB}\) frequency is to be less than or equal to \(20 \mathrm{~Hz}\). Assume that all
A bipolar transistor has \(f_{T}=4 \mathrm{GHz}, \beta_{o}=120\), and \(C_{\mu}=0.08 \mathrm{pF}\) when operated at \(I_{C Q}=0.25 \mathrm{~mA}\). Determine \(g_{m}, f_{\beta}\), and \(C_{\pi}\).
A high-frequency bipolar transistor is biased at \(I_{C Q}=0.4 \mathrm{~mA}\) and has parameters \(C_{\mu}=0.075 \mathrm{pF}, f_{T}=2 \mathrm{GHz}\), and \(\beta_{o}=120\). (a) Determine \(C_{\pi}\)
(a) The frequency \(f_{T}\) of a bipolar transistor is found to be \(540 \mathrm{MHz}\) when biased at \(I_{C Q}=0.2 \mathrm{~mA}\). The transistor parameters are \(C_{\mu}=0.4 \mathrm{pF}\) and
The circuit in Figure P7.48 is a hybrid- \(\pi\) equivalent circuit including the resistance \(r_{b}\). (a) Derive the expression for the voltage gain transfer function \(A_{v}(s)=V_{o}(s) /
Consider the circuit in Figure P7.49. Calculate the impedance seen by the signal source \(V_{i}\) at (a) \(f=1 \mathrm{kHz}\), (b) \(f=10 \mathrm{kHz}\), (c) \(f=100 \mathrm{kHz}\), and (d) \(f=1
A common-emitter equivalent circuit is shown in Figure P7.50. (a) What is the expression for the Miller capacitance? (b) Derive the expression for the voltage gain \(A_{v}(s)=V_{o}(s) / V_{i}(s)\) in
For the common-emitter circuit in Figure 7.41 (a) in the text, assume that \(r_{s}=\infty, R_{1} \| R_{2}=5 \mathrm{k} \Omega\), and \(R_{C}=R_{L}=1 \mathrm{k} \Omega\). The transistor is biased at
For the common-emitter circuit in Figure P7.52, assume the emitter bypass capacitor \(C_{E}\) is very large, and the transistor parameters are: \(\beta_{o}=100\), \(V_{B E}(\) on \()=0.7 \mathrm{~V},
Consider the circuit in Figure P7.52. The resistor \(R_{S}\) is changed to \(500 \Omega\) and all other resistor values are increased by a factor of 10 . The transistor parameters are the same as
The parameters of the circuit shown in Figure P7.52 are changed to \(V^{+}=5 \mathrm{~V}, R_{S}=0, R_{1}=33 \mathrm{k} \Omega, R_{2}=22 \mathrm{k} \Omega, R_{C}=5 \mathrm{k} \Omega\), and \(R_{E}=4
The parameters of an n-channel MOSFET are \(k_{n}^{\prime}=80 \mu \mathrm{A} / \mathrm{V}^{2}, W=4 \mu \mathrm{m}\), \(L=0.8 \mu \mathrm{m}, C_{g s}=50 \mathrm{fF}\), and \(C_{g d}=10 \mathrm{fF}\).
Find \(f_{T}\) for a MOSFET biased at \(I_{D Q}=120 \mu \mathrm{A}\) and \(V_{G S}-V_{T N}=0.20 \mathrm{~V}\). The transistor parameters are \(C_{g s}=40 \mathrm{fF}\) and \(C_{g d}=10 \mathrm{fF}\).
Fill in the missing parameter values in the following table for a MOSFET. Let \(K_{n}=1.5 \mathrm{~mA} / \mathrm{V}^{2}\). ID (A) fr (GHz) Cgs(fF) Cgd (FF) 50 60 10 300 60 10 3 60 10 250 2.5 8
(a) An n-channel MOSFET has an electron mobility of \(450 \mathrm{~cm}^{2} / \mathrm{V}-\mathrm{s}\) and a channel length of \(1.2 \mu \mathrm{m}\). Let \(V_{G S}-V_{T N}=0.5 \mathrm{~V}\). Determine
A common-source equivalent circuit is shown in Figure P7.59. The transistor transconductance is \(g_{m}=3 \mathrm{~mA} / \mathrm{V}\). (a) Calculate the equivalent Miller capacitance. (b) Determine
Starting with the definition of unity-gain frequency, as given by Equation (7.97), neglect the overlap capacitance, assume \(C_{g d} \cong 0\) and \(C_{g s} \cong\) \(\left(\frac{2}{3}\right) W L
The parameters of an ideal n-channel MOSFET are \(W / L=8\), \(\mu_{n}=400 \mathrm{~cm}^{2} / \mathrm{V}-\mathrm{s}, C_{\mathrm{ox}}=6.9 \times 10^{-7} \mathrm{~F} / \mathrm{cm}^{2}\), and \(V_{T
Figure P7.62 shows the high-frequency equivalent circuit of an FET, including a source resistance \(r_{s}\). (a) Derive an expression for the lowfrequency current gain \(A_{i}=I_{o} / I_{i}\). (b)
For the FET circuit in Figure P7.63, the transistor parameters are: \(K_{n}=\) \(1 \mathrm{~mA} / \mathrm{V}^{2}, V_{T N}=2 \mathrm{~V}, \lambda=0, C_{g s}=50 \mathrm{fF}\), and \(C_{g d}=8
The midband voltage gain of a common-source MOSFET amplifier is \(A_{v}=-15 \mathrm{~V} / \mathrm{V}\). The capacitances of the transistor are \(C_{g s}=0.2 \mathrm{pF}\) and \(C_{g d}=0.04
In the circuit in Figure P7.65, the transistor parameters are: \(\beta=120\), \(V_{B E}(\) on \()=0.7 \mathrm{~V}, V_{A}=100 \mathrm{~V}, C_{\mu}=1 \mathrm{pF}\), and \(f_{T}=600 \mathrm{MHz}\). (a)
In the circuit in Figure P7.66, the transistor parameters are: \(\beta=120\), \(V_{B E}(\mathrm{on})=0.7 \mathrm{~V}, V_{A}=\infty, C_{\mu}=3 \mathrm{pF}\), and \(f_{T}=250 \mathrm{MHz}\). Assume the
The parameters of the transistor in the common-source circuit in Figure P7.67 are: \(K_{p}=2 \mathrm{~mA} / \mathrm{V}^{2}, V_{T P}=-2 \mathrm{~V}, \lambda=0.01 \mathrm{~V}^{-1}, C_{g s}=10
The bias voltages of the circuit shown in Figure P7.67 are changed to \(V^{+}=3 \mathrm{~V}\) and \(V^{-}=-3 \mathrm{~V}\). The input resistances are \(R_{i}=4 \mathrm{k} \Omega\) and \(R_{G}=200
For the PMOS common-source circuit shown in Figure P7.69, the transistor parameters are: \(V_{T P}=-2 \mathrm{~V}, K_{p}=1 \mathrm{~mA} / \mathrm{V}^{2}, \lambda=0, C_{g s}=15 \mathrm{pF}\), and
In the common-base circuit shown in Figure P7.70, the transistor parameters are: \(\beta=100, V_{B E}(\) on \()=0.7 \mathrm{~V}, V_{A}=\infty, C_{\pi}=10 \mathrm{pF}\), and \(C_{\mu}=1 \mathrm{pF}\).
Repeat Problem 7.70 for the common-base circuit in Figure P7.71. Assume \(V_{E B}(\) on \()=0.7\) for the pnp transistor. The remaining transistor parameters are the same as given in Problem
In the common-gate circuit in Figure P7.72, the transistor parameters are: \(V_{T N}=1 \mathrm{~V}, K_{n}=3 \mathrm{~mA} / \mathrm{V}^{2}, \lambda=0, C_{g s}=15 \mathrm{pF}\), and \(C_{g d}=4
Consider the common-gate circuit in Figure P7.73 with parameters \(V^{+}=\) \(5 \mathrm{~V}, V^{-}=-5 \mathrm{~V}, R_{S}=4 \mathrm{k} \Omega, R_{D}=2 \mathrm{k} \Omega, R_{L}=4 \mathrm{k} \Omega,
For the cascode circuit in Figure 7.65 in the text, circuit parameters are the same as described in Example 7.15. The transistor parameters are: \(\beta_{o}=120, V_{A}=\infty, V_{B
An emitter-follower amplifier is shown in Figure P7.75. Using a computer simulation, determine the upper \(3 \mathrm{~dB}\) frequency and the midband voltage gain for: (a) \(R_{L}=0.2 \mathrm{k}
The transistor circuit in Figure P7.76 is a Darlington pair configuration. Using a computer simulation, determine the upper \(3 \mathrm{~dB}\) frequency and the midband voltage gain for (a) \(R_{E
Consider the common-source amplifier in Figure P7.77 (a) and the cascode amplifier in Figure P7.77(b). Using standard transistors, determine the upper \(3 \mathrm{~dB}\) frequency and the midband
Consider identical transistors in the circuit in Figure P7.78. Assume the two coupling capacitors are both equal to \(C_{C}=4.7 \mu \mathrm{F}\). Using a computer simulation, determine the lower and
(a) Design a common-emitter amplifier using a 2N2222A transistor biased at \(I_{C Q}=1 \mathrm{~mA}\) and \(V_{C E Q}=10 \mathrm{~V}\). The available power supplies are \(\pm 15 \mathrm{~V}\), the
Design a bipolar amplifier with a midband gain of \(\left|A_{v}\right|=50\) and a lower \(3 \mathrm{~dB}\) frequency of \(10 \mathrm{~Hz}\). The available transistors are \(2 \mathrm{~N} 2222
A common-emitter amplifier is designed to provide a particular midband gain and a particular bandwidth, using device A from Table P7.81. Assume \(I_{C Q}=1 \mathrm{~mA}\). Investigate the effect on
A simplified high-frequency equivalent circuit of a common-emitter amplifier is shown in Figure P7.82. The input signal is coupled into the amplifier through \(C_{C 1}\), the output signal is coupled
Describe the basic structure and operation of npn and pnp bipolar transistors.
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