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computer science
systems analysis and design 12th
Questions and Answers of
Systems Analysis And Design 12th
Can a piecewise linear model of the transistor be used in the analysis of the Widlar current source? Why or why not?
Discuss the operation and significance of a multiple-output transistor current mirror.
Sketch the basic MOSFET two-transistor current source and explain the operation.
Discuss the effect of mismatched transistors on the characteristics of the MOSFET two-transistor current source.
Discuss how the reference portion of a MOSFET current source can be designed with MOSFETs only.
Sketch a MOSFET cascode current source circuit and discuss the advantages of this design.
Discuss the operation of an active load.
What is the primary advantage of using an active load?
Sketch the voltage transfer characteristics of a simple amplifier with an active load. Where should the \(Q\)-point be placed?
What is the impedance seen looking into a simple active load?
What is the advantage of using a cascode active load?
Figure P10.1 shows another form of a bipolar current source.(a) Neglecting base currents, derive the expression for \(I_{C}\) in terms of the circuit, transistor, and diode parameters.(b) If the
The matched transistors \(Q_{1}\) and \(Q_{2}\) in Figure 10.2 (a) have parameters \(I_{S}=10^{-16} \mathrm{~A}\).(a) For \(\beta=\infty\), determine \(I_{O}\) and \(V_{B E 1}\) for (i)
Consider the circuit in Figure 10.2(a). Let \(I_{\mathrm{REF}}=200 \mu \mathrm{A}\). Assume transistor parameters of \(\beta=80, I_{S 1}=5 \times 10^{-15} \mathrm{~A}\), and \(I_{S 2}=2 \times
Reconsider the circuit in Figure 10.2(a). Let \(I_{\text {REF }}=150 \mu \mathrm{A}\). Assume transistor parameters of \(\beta=120, I_{S 1}=10^{-16} \mathrm{~A}\), and \(I_{S 2}=3 \times 10^{-16}
Consider the circuit shown in Figure P10.5. Assume \(I_{\mathrm{REF}}=200 \mu \mathrm{A}\) and \(R=2 \mathrm{k} \Omega\). The transistor parameters are \(\beta=40, I_{S 1}=I_{S 2}=5 \times 10^{-15}
The transistor and circuit parameters for the circuit in Figure 10.2 (b) are: \(V_{B E}\) (on) \(=0.7 \mathrm{~V}, \beta=60, V_{A}=\infty, V^{+}=+3 \mathrm{~V}, V^{-}=-3 \mathrm{~V}\), and
The bias voltages in the circuit shown in Figure 10.2(b) are \(V^{+}=+5 \mathrm{~V}\), \(V^{-}=-5 \mathrm{~V}\) and the resistor value is \(R_{1}=18.3 \mathrm{k} \Omega\). Assume transistor
Consider the current source in Figure 10.2(b). The circuit is biased at \(V^{+}=2.5 \mathrm{~V}\) and \(V^{-}=-2.5 \mathrm{~V}\). The transistor parameters are \(\beta \cong \infty\),
For the basic two-transistor current source in Figure 10.2(b), the transistor parameters are: \(\beta=120, V_{B E}(\) on \()=0.7 \mathrm{~V}\), and \(V_{A}=100 \mathrm{~V}\). The bias voltages are
The transistors in the basic current mirror in Figure 10.2(b) have a finite \(\beta\) and an infinite Early voltage. The B-E area of \(Q_{2}\) is \(n\) times that of \(Q_{1}\). Derive the expression
Figure P10.11 shows a basic two-transistor pnp current source. The transistor parameters are \(V_{E B}(\mathrm{on})=0.7 \mathrm{~V}, \beta=40\), and \(V_{A}=\infty\). Design the circuit such that
In the circuit in Figure P10.11, the transistor parameters are \(\beta=80\) and \(V_{E B}\) (on) \(=0.7 \mathrm{~V}\). (a) Design the circuit such that \(I_{O}=120 \mu \mathrm{A}\) for \(V_{E C 2}=\)
Consider the pnp current source in Figure P10.13, with transistor parameters \(\beta=\infty, V_{A}=\infty\), and \(V_{E B}\) (on) \(=0.7 \mathrm{~V}\). (a) Design the circuit such that
Consider the circuit shown in Figure P10.14. The transistor \(Q_{2}\) is equivalent to two identical transistors in parallel, each of which is matched to \(Q_{1}\). Assume the transistor parameters
Design a basic two-transistor current source circuit configuration such that \(I_{O}=0.40 \mathrm{~mA}\) and \(I_{\mathrm{REF}}=0.20 \mathrm{~mA}\). The circuit is to be biased at \(V^{+}=2.5
The values of \(\beta\) for the transistors in Figure P10.16 are very large.(a) If \(Q_{1}\) is diode-connected with \(I_{1}=0.5 \mathrm{~mA}\), determine the collector currents in the other two
Consider the circuit in Figure P10.17. The transistor parameters are: \(\beta=80\), \(V_{B E}(\mathrm{on})=0.7 \mathrm{~V}\), and \(V_{A}=\infty\). (a) Derive the expression for \(I_{O}\) in terms of
All transistors in the \(N\) output current mirror in Figure P10.18 are matched, with a finite \(\beta\) and \(V_{A}=\infty\). (a) Derive the expression for each load current in terms of \(I_{\text
Design a pnp version of the basic three-transistor current source circuit, using a resistor to establish \(I_{\mathrm{REF}}\). The bias current is to be \(I_{O}=0.15 \mathrm{~mA}\), and the circuit
Design a pnp version of the Wilson current source, using a resistor to establish \(I_{\text {REFF }}\). The circuit parameters are \(V^{+}=9 \mathrm{~V}\) and \(V^{-}=-9 \mathrm{~V}\), and the
Consider the Wilson current source in Figure P10.21. The transistors have a finite \(\beta\) and an infinite Early voltage. Derive the expression for \(I_{O}\) in terms of \(I_{\text {REF }}\) and
Consider the circuit in Figure P10.22. The transistor parameters for \(Q_{1}\) and \(Q_{2}\) are \(V_{B E 1,2}(\mathrm{on})=0.7 \mathrm{~V}\) and \(\beta_{1,2}=90\). The parameters for \(Q_{3}\) are
Consider the Wilson current-source circuit shown in Figure 10.8. Assume the reference current is \(0.25 \mathrm{~mA}\) and assume transistor parameters of \(V_{B E}(\) on \()=0.7 \mathrm{~V},
Consider the Widlar current source shown in Figure 10.9. The circuit parameters are \(V^{+}=+5 \mathrm{~V}, V^{-}=0, R_{1}=9.3 \mathrm{k} \Omega\), and \(R_{E}=1.5 \mathrm{k} \Omega\). Assume \(V_{B
For the circuit shown in Figure P10.25, neglect base currents and assume \(V_{A}=\infty\). Let \(I_{\mathrm{REF}}=200 \mu \mathrm{A}\) and \(R_{E}=500 \Omega\).(a) Assume the transistor parameters
Consider the circuit in Figure P10.26. Neglect base currents and assume \(V_{A}=\infty\). Assume \(I_{\mathrm{REF}}=100 \mu \mathrm{A}\) and \(R_{E}=700 \Omega\).(a) For transistor parameters of
(a) For the Widlar current source shown in Figure 10.9, find \(I_{\text {REF }}, I_{O}\), and \(V_{B E 2}\) if \(R_{1}=50 \mathrm{k} \Omega, R_{E}=3 \mathrm{k} \Omega, V^{+}=5 \mathrm{~V}\), and
Consider the Widlar current source in Problem 10.27. For \(\beta=80\) and \(V_{A}=80 \mathrm{~V}\), determine the change in \(I_{O}\) corresponding to a \(5 \mathrm{~V}\) change in the output
(a) Design the Widlar current source such that \(I_{\mathrm{REF}}=0.50 \mathrm{~mA}\) and \(I_{O}=\) \(50 \mu \mathrm{A}\). Assume that \(V^{+}=+5 \mathrm{~V}, V^{-}=-5 \mathrm{~V}, V_{B E 1}=0.7
Design a Widlar current source to provide a bias current of \(I_{O}=50 \mu \mathrm{A}\). The circuit is to be biased at \(V^{+}=3 \mathrm{~V}\) and \(V^{-}=-3 \mathrm{~V}\). Assume \(V_{B E 1}(\) on
Design the Widlar current source shown in Figure 10.9 such that \(I_{\text {REF }}=\) \(2 \mathrm{~mA}\) and \(I_{O}=50 \mu \mathrm{A}\). Let \(V^{+}=15 \mathrm{~V}\) and \(V^{-}=0\). The transistors
The circuit parameters of the Widlar current source in Figure 10.9 are \(V^{+}=3 \mathrm{~V}, V^{-}=-3 \mathrm{~V}\), and \(R_{1}=20 \mathrm{k} \Omega\). Assume \(V_{B E 1}(\mathrm{on})=0.7
Consider the Widlar current source in Figure 10.9. The circuit parameters are: \(V^{+}=10 \mathrm{~V}, V^{-}=-10 \mathrm{~V}, R_{1}=40 \mathrm{k} \Omega\), and \(R_{E}=12 \mathrm{k} \Omega\). Neglect
Consider the circuit in Figure P10.34. The transistors are matched. Assume that base currents are negligible and that \(V_{A}=\infty\). Using the current-voltage relationships given by Equations
The modified Widlar current-source circuit shown in Figure P10.34 is biased at \(V^{+}=3 \mathrm{~V}\) and \(V^{-}=-3 \mathrm{~V}\).(a) For \(I_{S 1}=I_{S 2}=10^{-15} \mathrm{~A}\) and \(R_{E 1}=500
Consider the circuit in Figure P10.36. Neglect base currents and assume \(V_{A}=\infty\). (a) Derive the expression for \(I_{O}\) in terms of \(I_{\text {REF }}\) and \(R_{E}\). (b) Determine the
Consider the Widlar current-source circuit with multiple output transistors shown in Figure P10.37. Assume \(V_{B E 1}=0.7\) V. (a) For circuit parameters \(R_{1}=10 \mathrm{k} \Omega, R_{E 2}=1
Assume that all transistors in the circuit in Figure P10.38 are matched and that \(\beta=\infty\) (neglect base currents). (a) Derive an expression for \(I_{O}\) in terms of bias voltages and
In the circuit in Figure P10.39, the transistor parameters are: \(\beta=\infty\), \(V_{A}=\infty\), and \(V_{B E}=V_{E B}=0.7 \mathrm{~V}\). Let \(R_{C 1}=2 \mathrm{k} \Omega, R_{C 2}=3 \mathrm{k}
Consider the circuit in Figure P10.39, with transistor parameters \(\beta=\infty\), \(V_{A}=\infty\), and \(V_{B E}\) (on) \(=V_{E B}\) (on) \(=0.7 \mathrm{~V}\). Let \(R_{1}=24 \mathrm{k} \Omega\).
Consider the circuit shown in Figure P10.41. Assume \(V_{B E}=V_{E B}=0.7 \mathrm{~V}\) for all transistors except \(Q_{5}\) and let \(\beta=\infty\). Determine all collector currents, and find
For the circuit shown in Figure P10.42, assume transistor parameters \(V_{B E}=\) \(V_{E B}=0.7 \mathrm{~V}\) for all transistors except \(Q_{3}\) and \(Q_{6}\), and let \(\beta=\infty\). Find the
Consider the circuit in Figure P10.43. The transistor parameters are: \(\beta=\infty, V_{A}=\infty\), and \(V_{B E}=0.7 \mathrm{~V}\). Design the circuit such that the B-E voltages of \(Q_{1},
Consider the MOSFET current-source circuit in Figure P10.44 with \(V^{+}=\) \(+2.5 \mathrm{~V}\) and \(R=15 \mathrm{k} \Omega\). The transistor parameters are \(V_{T N}=0.5 \mathrm{~V},
The MOSFET current-source circuit in Figure P10.44 is biased at \(V^{+}=\) \(2.0 \mathrm{~V}\). The transistor parameters are \(V_{T N}=0.5 \mathrm{~V}, k_{n}^{\prime}=80 \mu \mathrm{A} /
Consider the basic two-transistor NMOS current source in Figure 10.16. The circuit parameters are \(V^{+}=+5 \mathrm{~V}, V^{-}=-5 \mathrm{~V}\), and \(I_{\mathrm{REF}}=250 \mu \mathrm{A}\). The
In the two-transistor NMOS current source shown in Figure 10.16, the parameters are: \(V^{+}=3 \mathrm{~V}, V^{-}=-3 \mathrm{~V}\), and \(I_{\mathrm{REF}}=0.2 \mathrm{~mA}\). The transistor
Consider the circuit shown in Figure P10.48. Let \(I_{\text {REF }}=200 \mu\) A. The transistor parameters are \(K_{n 1}=K_{n 2}=0.2 \mathrm{~mA} / \mathrm{V}^{2}, V_{T N 1}=V_{T N 2}=0.5
Consider the two-transistor diode-connected circuit in Figure P10.49. Assume that both transistors are biased in the saturation region, and that \(g_{m 1}=g_{m 2} \equiv g_{m}\) and \(r_{o 1}=r_{o 2}
The circuit parameters for the circuit shown in Figure 10.17 are \(V^{+}=1.8 \mathrm{~V}\) and \(V^{-}=-1.8 \mathrm{~V}\). The transistor parameters are \(V_{T N}=0.5 \mathrm{~V}\),
The parameters for the circuit in Figure 10.17 are \(V^{+}=+5 \mathrm{~V}\) and \(V^{-}=0\). The transistor parameters are \(V_{T N}=0.7 \mathrm{~V}, k_{n}^{\prime}=60 \mu \mathrm{A} /
Figure P10.52 is a PMOS version of the current-source circuit shown in Figure 10.17. The transistor \(M_{2}\) sources a bias current to a load circuit. Assume the circuit is biased at \(V^{+}=+5
The circuit shown in Figure P10.52 is biased at \(V^{+}=+2 \mathrm{~V}\) and \(V^{-}=\) \(-2 \mathrm{~V}\). Assume the transistor parameters are \(V_{T P}=-0.35 \mathrm{~V}, k_{p}^{\prime}=\) \(50
The transistor circuit shown in Figure P10.54 is biased at \(V^{+}=+5 \mathrm{~V}\) and \(V^{-}=-5 \mathrm{~V}\). The transistor parameters are \(V_{T P}=-1.2 \mathrm{~V}, k_{p}^{\prime}=\) \(80 \mu
Assume the circuit shown in Figure P10.54 is biased at \(V^{+}=3 \mathrm{~V}\) and \(V^{-}=-3 \mathrm{~V}\). The transistor parameters are \(V_{T P}=-0.5 \mathrm{~V}, k_{p}^{\prime}=60 \mu \mathrm{A}
The circuit in Figure P10.56 is a PMOS version of a two-transistor MOS current mirror. Assume transistor parameters of \(V_{T P}=-0.4 \mathrm{~V}\), \(k_{p}^{\prime}=60 \mu \mathrm{A} /
The transistors in Figure P10.56 have the same parameters as in Problem 10.56 except for the \(W / L\) ratios. Design the circuit such that \(I_{O}=80 \mu \mathrm{A}\), \(I_{\mathrm{REF}}=220 \mu
Consider the NMOS cascode current source in Figure 10.18. The circuit parameters are \(V^{+}=5 \mathrm{~V}, V^{-}=-5 \mathrm{~V}\), and \(I_{\mathrm{REF}}=100 \mu \mathrm{A}\). All transistors are
Consider the NMOS current source in Figure P10.59. Let \(I_{\mathrm{REF}}=0.2 \mathrm{~mA}\), \(K_{n}=0.2 \mathrm{~mA} / \mathrm{V}^{2}, V_{T N}=1 \mathrm{~V}\), and \(\lambda=0.02
The transistors in the circuit shown in Figure P10.60 have parameters \(V_{T N}=0.4 \mathrm{~V}, \quad V_{T P}=-0.4 \mathrm{~V}, \quad k_{n}^{\prime}=100 \mu \mathrm{A} / \mathrm{V}^{2},
The transistors in the circuit shown in Figure P10.60 have the same parameters as in Problem 10.60 except for the \((W / L)\) ratios. Design the circuit such that \(I_{O}=50 \mu \mathrm{A},
A Wilson current mirror is shown in Figure 10.20(a). The parameters are: \(V^{+}=5 \mathrm{~V}, V^{-}=-5 \mathrm{~V}\), and \(I_{\text {REF }}=80 \mu \mathrm{A}\). The transistor parameters are:
Repeat Problem 10.62 for the modified Wilson current mirror in Figure 10.20(b).Data From Problem 10.62:-A Wilson current mirror is shown in Figure 10.20(a). The parameters are: \(V^{+}=5 \mathrm{~V},
Consider the circuit in Figure 10.21 in the text. Assume \(I_{\mathrm{REF}}=50 \mu \mathrm{A}\) and assume transistor parameters of \(V_{T N}=0.8 \mathrm{~V},\left(\frac{1}{2}\right) \mu_{n}
Consider the bias-independent current source in Figure 10.22. Assume transistor parameters of \(V_{T N}=+0.5 \mathrm{~V}, V_{T P}=-0.5 \mathrm{~V},\left(\frac{1}{2}\right) \mu_{n} C_{\mathrm{ox}}=\)
Consider the multitransistor current source in Figure P10.66. The transistor parameters are \(V_{T N}=0.7 \mathrm{~V}, k_{n}^{\prime}=80 \mu \mathrm{A} / \mathrm{V}^{2}\), and \(\lambda=0\). Assume
Consider the circuit shown in Figure P10.67. The transistor parameters are \(V_{T N}=0.4 \mathrm{~V}, k_{n}^{\prime}=100 \mu \mathrm{A} / \mathrm{V}^{2}\), and \(\lambda=0\). Design the \((W / L)\)
The parameters of the transistors in the circuit in Figure P10.68 are \(V_{T N}=0.8 \mathrm{~V}, V_{T P}=-0.8 \mathrm{~V}, k_{n}^{\prime}=100 \mu \mathrm{A} / \mathrm{V}^{2}, k_{p}^{\prime}=60 \mu
Repeat Problem 10.68 if the bias voltages are changed to \(V^{+}=5 \mathrm{~V}\) and \(V^{-}=-5 \mathrm{~V}\).Data From Problem 10.68:-The parameters of the transistors in the circuit in Figure
Consider the circuit shown in Figure P10.70. The NMOS transistor parameters are \(V_{T N}=0.4 \mathrm{~V}, k_{n}^{\prime}=100 \mu \mathrm{A} / \mathrm{V}^{2}, \lambda_{n}=0\) and the PMOS transistor
For the circuit shown in Figure P10.70, \(I_{\text {REF }}=100 \mu \mathrm{A}\). The transistor parameters are \(V_{T N}=0.4 \mathrm{~V}, V_{T P}=-0.4 \mathrm{~V}, k_{n}^{\prime}=100 \mu \mathrm{A} /
The parameters of the NMOS transistors in the circuit in Figure P10.72 are \(V_{T N}=0.4 \mathrm{~V}, k_{n}^{\prime}=100 \mu \mathrm{A} / \mathrm{V}^{2}, \lambda_{n}=0\) and the parameters of the
For the JFET in Figure P10.73, the parameters are: \(I_{D S S}=2 \mathrm{~mA}, V_{P}=\) \(-2 \mathrm{~V}\), and \(\lambda=0.05 \mathrm{~V}^{-1}\). Determine \(I_{O}\) for: (a) \(V_{D}=-5
A JFET circuit is biased with the current source in Figure P10.74. The transistor parameters are: \(I_{D S S}=4 \mathrm{~mA}, V_{P}=-4 \mathrm{~V}\), and \(\lambda=0\). Design the circuit such that
Consider the circuit shown in Figure P10.75. The transistor parameters are \(I_{S 1}=5 \times 10^{-16} \mathrm{~A}, I_{S 2}=10^{-15} \mathrm{~A}, \beta_{1}=180, \beta_{2}=120, V_{A 1}=120
For the circuit shown in Figure P10.76, the transistor parameters are \(V_{T N}=0.5 \mathrm{~V}, V_{T P}=-0.5 \mathrm{~V}, k_{n}^{\prime}=100 \mu \mathrm{A} / \mathrm{V}^{2}, k_{p}^{\prime}=60 \mu
Consider the simple BJT active load amplifier in Figure 10.29, with transistor parameters: \(I_{S O}=10^{-12} \mathrm{~A}, I_{S 1}=I_{S 2}=5 \times 10^{-13} \mathrm{~A}, V_{A N}=120 \mathrm{~V}\),
The amplifier shown in Figure P10.78 uses a pnp driver and an npn active load circuit. The transistor parameters are: \(I_{S 0}=5 \times 10^{-13} \mathrm{~A}, I_{S 1}=I_{S 2}=\) \(10^{-12}
The bias voltage of the MOSFET amplifier with active load in Figure \(\mathrm{P} 10.79\) is changed to \(V^{+}=3 \mathrm{~V}\). The transistor parameters are \(V_{T N}=\) \(0.5 \mathrm{~V}, V_{T
The simple MOSFET amplifier with active load shown in Figure 10.33 is biased at \(V^{+}=3 \mathrm{~V}\). The reference current is \(I_{\mathrm{REF}}=80 \mu \mathrm{A}\). The transistor parameters are
Consider the circuit shown in Figure 10.37(a). Let \(V^{+}=3 \mathrm{~V}\) and \(R_{1}=\) \(47 \mathrm{k} \Omega\). The transistors \(Q_{1}\) and \(Q_{2}\) are matched with \(V_{E B}(\mathrm{on})=0.6
Again consider the circuit shown in Figure 10.37(a). Let \(V^{+}=5 \mathrm{~V}\) and \(R_{1}=35 \mathrm{k} \Omega\). Let \(V_{E B 1}\) (on) \(=0.6 \mathrm{~V}\). Neglect dc base currents. The
A BJT amplifier with active load is shown in Figure P10.83. The circuit contains emitter resistors \(R_{E}\) and a load resistor \(R_{L}\). (a) Derive the expression for the output resistance looking
In the circuit in Figure P10.84, the active load circuit is replaced by a Wilson current source. Assume that \(\beta=80\) for all transistors, and that \(V_{A N}=120 \mathrm{~V}, V_{A P}=80
For the circuit in Figure 10.40(a), the transistor parameters are \(k_{n}^{\prime}=\) \(80 \mu \mathrm{A} / \mathrm{V}^{2}, k_{p}^{\prime}=40 \mu \mathrm{A} / \mathrm{V}^{2}, V_{T N}=0.8 \mathrm{~V},
Consider the circuit in Figure 10.40(a). The transistor and circuit parameters are the same as given in Problem 10.85 except for the width-to-length ratios of the transistors. Determine the \(W / L\)
The parameters of the transistors in Figure P10.87 are \(V_{T N}=0.6 \mathrm{~V}\), \(V_{T P}=-0.6 \mathrm{~V}, \quad k_{n}^{\prime}=100 \mu \mathrm{A} / \mathrm{V}^{2}, \quad k_{p}^{\prime}=60 \mu
The parameters of the transistors in Figure P10.88 are \(V_{T N}=0.6 \mathrm{~V}\), \(V_{T P}=-0.6 \mathrm{~V}, \quad k_{n}^{\prime}=100 \mu \mathrm{A} / \mathrm{V}^{2}, \quad k_{p}^{\prime}=60 \mu
A BJT cascode amplifier with a cascode active load is shown in Figure P10.89. Assume transistor parameters of \(\beta=120\) and \(V_{A}=80 \mathrm{~V}\). The \(V_{B B}\) voltage is such that all
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