A chlorine-based polysilicon etch process displays a polysilicomresist selectivity of 4:1 and a polysil-icomoxide selectivity of 50:1.
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A chlorine-based polysilicon etch process displays a polysilicomresist selectivity of 4:1 and a polysil-icomoxide selectivity of 50:1. How much resist and exposed oxide will be consumed in etching 350 nm of polysilicon? What should the polysilicomoxide selectiv¬ity be in order to remove only 4 nm of exposed oxide?
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Determine the amount of resist etched as shown below W r W p x e r Here amount of re...View the full answer
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Related Book For 
Manufacturing Processes for Engineering Materials
ISBN: 978-0132272711
5th edition
Authors: Serope Kalpakjian, Steven Schmid
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