Question: A chlorine-based polysilicon etch process displays a polysilicomresist selectivity of 4:1 and a polysil-icomoxide selectivity of 50:1. How much resist and exposed oxide will be

A chlorine-based polysilicon etch process displays a polysilicomresist selectivity of 4:1 and a polysil-icomoxide selectivity of 50:1. How much resist and exposed oxide will be consumed in etching 350 nm of polysilicon? What should the polysilicomoxide selectiv¬ity be in order to remove only 4 nm of exposed oxide?

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