Question: A process error may cause the oxide thicknesses on the surface of a silicon wafer to be wavy, with a constant difference between the wave

A process error may cause the oxide thicknesses on the surface of a silicon wafer to be “wavy,” with a constant difference between the wave heights. What precautions are necessary in taking a random sample of oxide thick–nesses at various positions on the wafer to assure that the observations are independent?

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