Question: Antimony atoms are to be diffused into a silicon wafer using both pre-deposition and drive-in heat treatments; the background concentration of Sb in this silicon

Antimony atoms are to be diffused into a silicon wafer using both pre-deposition and drive-in heat treatments; the background concentration of Sb in this silicon material is known to be 2 ( 1020 atoms/m3. The pre-deposition treatment is to be conducted at 900(C for 1 h; the surface concentration of Sb is to be maintained at a constant level of 8.0 ( 1025 atoms/m3. Drive-in diffusion will be carried out at 1200(C for a period of 1.75 h. For the diffusion of Sb in Si, values of Qd and D0 are 3.65 eV/atom and 2.14 ( 10(5 m2/s, respectively.

(a) Calculate the value of Q0.

(b) Determine the value of xj for the drive-in diffusion treatment.

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