For the pre-deposition heat treatment of a semiconducting device, gallium atoms are to be diffused into silicon
Question:
For the pre-deposition heat treatment of a semiconducting device, gallium atoms are to be diffused into silicon at a temperature of 1150(C for 2.5 h. If the required concentration of Ga at a position 2 (m below the surface is 8 ( 1023 atoms/m3, compute the required surface concentration of Ga. Assume the following:
(i) The surface concentration remains constant
(ii) The background concentration is 2 ( 1019 Ga atoms/m3
(iii) Pre-exponential and activation energy values are 3.74 ( 10-5m2/s and 3.39 eV/atom, respectively?
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This problem requires that we solve for the surface concentration C s of Equation 55 given the follo...View the full answer
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Related Book For 
Materials Science and Engineering An Introduction
ISBN: 978-1118324578
9th edition
Authors: William D. Callister Jr., David G. Rethwisch
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