Calculate the constant surface concentrations of phosphorus and boron needed to achieve a concentration of 1018 atoms/cm3 at a depth of 0.1 μm from the surface of single crystal silicon using a thermal treatment at 1100 °C for 1 hour. Consider phosphorus and boron separately. The diffusion coefficients of P and B in single crystal silicon at 1100 °C are 6.5 × 10-13 cm2/s and 6.1 × 10-13 cm2/s, respectively?