R. Viswanathan, R.W. Schmude, Jr., and K.A. Gingerich (J. Phys. Chem. 100,10784 (1996)) studied thermodynamic properties of several boron-silicon gas-phase species experimentally and theoretically. These species can occur in the high-temperature chemical vapour deposition (CVD) of silicon-based semiconductors. Among the computations they reported was computation of the Gibbs energy of BSi(g) at several temperatures based on a 4L ground state with equilibrium intern clear distance of 190.5 pm and fundamental vibrational wave number of772 cm-1 and a 2PO first excited level 8000 cm-1 above the ground level. Compute the standard molar Gibbs energy Gm (2000 K) - Gm(O).