The data provided in Figure 26.7 are based on the diffusion of O₂into SiO₂formed from the oxidation of (100) crystalline silicon at 1000°C. Estimate the diffusion coefficient of O₂in SiO₂formed from the oxidation of (111) crystalline silicon at 1000°C, using the data in the table below, provided by Hess (1990).^* 

The maximum solubility of O₂ in the SiO₂ is 9.6 · 10^-8 mole O₂/cm³ solid at 1000^oC and 1.0 atm O₂ gas partial pressure.

Figure 26.7

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Measured SiO2 Film Thickness (µm) Time 1.0 0.049 0.070 2.0 0.078 0.105 4.0 0.124 0.154 7.0 0.180 0.212 16.0 0.298 0.339 0.4 Data Model 0.3 0.2 0.1 0.0 4 6 10 12 14 16 Time, t (h) SIO2 film thickness, 8 (µm)