A Si p-n junction is doped with an acceptor concentration N A = 5 10 18
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A Si p-n junction is doped with an acceptor concentration NA = 5 × 1018 cm-3 and a donor concentration ND = 5 × 1015 cm-3. The critical electric field strength for breakdown is equal to 105 V.cm-1. Determine the breakdown voltage and the corresponding depletion width. Do the same for a donor concentration ND = 5 × 1017 cm-3.
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Eb Vb d 6 In plane geometry the breakdown voltage Vb ...View the full answer
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