An abrupt Si p – n junction has the following properties at 300 K: 

   

a. Calculate the reverse saturation current I0, and find the current I with a forward bias of 0.6 V.

b. Find the electron injection efficiency In /I, at xp = 0.

Transcribed Image Text:

p-side Na = 1015 cm3 n-side Na = 1017 cm3 A = 104 cm2 Tn = 10 us Hn = 1300 cm²/V-s Hp = 450 cm2/V-s Tp= 0.01 µs Hp = 250 cm?/V-s Hn = 700 cm?/V-s %3D p-side Na = 1015 cm3 n-side Na = 1017 cm3 A = 104 cm2 Tn = 10 us Hn = 1300 cm²/V-s Hp = 450 cm2/V-s Tp= 0.01 µs Hp = 250 cm?/V-s Hn = 700 cm?/V-s %3D

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a The current I in the p n diode when the forward bias of 06N ... View the full answer