In this chapter we introduced four measurement techniques that yield the impurity concentration in semiconductor layers, namely,
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In this chapter we introduced four measurement techniques that yield the impurity concentration in semiconductor layers, namely, SIMS, sheet resistivity (SR) measurements, Hall effect measurements, and ECV profiling. Complete the following table to compare these four techniques with respect to the stated application requirements.
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Application requirement SIMS SR Hall ECV Determination of doping concentration Determination of doping type (ntype or p-type) Determination of the concentration of electrically activated dopants Easy sample preparation Determination of dopant concentration as a function of depth Non-destructive measurement Thickness of the layer may be unknown
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