A semiconductor with a band gap of 0.8 eV and an intrinsic carrier concentration of 1012 cm
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Question:
A semiconductor with a band gap of 0.8 eV and an intrinsic carrier concentration of 1012 cm -3 is doped with 1018 cm -3 donors on the left half and 1017 cm -3 acceptors on the right half. Draw the equilibrium band diagram. Calculate the junction potential and the position of the Fermi level, and indicate them on the band diagram. Suppose an electron at the conduction band edge on the p side goes over the n side without scattering. Assuming parabolic band structure, calculate its wave vector there. The effective mass of the carriers is 0.2m 0 .
Related Book For
Chemistry The Central Science
ISBN: 978-0321696724
12th edition
Authors: Theodore Brown, Eugene LeMay, Bruce Bursten, Catherine Murphy, Patrick Woodward
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