$>0$ portion is illuminated with light. The light generates G $=1015$ electron$-$hole pairs$/$cm$3-$sec

uniformly through the x $>0$ region of the bar. G $=0$ for x $<0,$ steady state conditions prevail, the

semiconductor is silicon, the entire bar is uniformly doped with ND$=1018/$cm$3,$ p$=10-6$ sec$,$ and T$=300$K