A p-type Ge sample with a resistivity of 40 -cm at 300 K is uniformly il-...

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A p-type Ge sample with a resistivity of 40 -cm at 300 K is uniformly il- luminated with light that generates 10¹3 excess electron-hole pairs per cm³ per sec. In the steady state, calculate the change in resistivity of the sample caused by the light. If the light is switched off at = 0, calculate the time required for the excess conductivity to drop to 10 percent of its value at t = 0. Assume T = 10-6 sec. A Si sample is doped with 10¹5 donors cm³. Calculate the excess electron and hole concentrations required to increase the sample conductivity by 15 percent. What carrier generation rate is required to maintain these ex- cess concentrations? Assume p 0.3, p= 10-6 sec and T = 300 K. = A p-type Ge sample with a resistivity of 40 -cm at 300 K is uniformly il- luminated with light that generates 10¹3 excess electron-hole pairs per cm³ per sec. In the steady state, calculate the change in resistivity of the sample caused by the light. If the light is switched off at = 0, calculate the time required for the excess conductivity to drop to 10 percent of its value at t = 0. Assume T = 10-6 sec. A Si sample is doped with 10¹5 donors cm³. Calculate the excess electron and hole concentrations required to increase the sample conductivity by 15 percent. What carrier generation rate is required to maintain these ex- cess concentrations? Assume p 0.3, p= 10-6 sec and T = 300 K. =

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solution 5 Given PType Ge sample TAPO Conductivity and change For change Now Hence Hence le tt Light ... View the full answer