$(10pts)GaAs$ and InSb are intrinsic compound semiconductors. Their properties are given in Table $13$

Conductivity is defined as:

$=n|e|({}_e+{}_h)=p|e|({}_e+{}_h)$

$=n_i|e|({}_e+{}_h)$

where $n$ is the number of electrons per cubic meter, $p$ is the number of holes per cubic meter, $n_i$ is th intrinsic carrier concentration per cubic meter, ${}_e$ is the electron mobility, ${}_h$ is the hole mobility, and the charge $(+-1\mathrm{.}6{10}^{-19}C$ depending upon the charge carrier$).$ Calculate the intrinsic carrier concentrations for both materials at room temperature.

The electrical conductivities of GaAs and InSb are ${10}^{-6}(*m{)}^{-1}$ and $2{10}^4(*m{)}^{-1}$ respectively.

TABLE $13\mathrm{.}9$

Electrical Properties for Some Intrinsic, Compound Semiconductors at Room Temperature $(300$ K $)$

$\backslash$table$[[$Group$,$Semiconductor,$E_g(eV),{}_e[\frac{m^2}{V*s}],{}_h[\frac{m^2}{V*s}],$