Question: 1 . ( 2 ) A Si wafer is doped with P at 1 0 1 5 cm - 3 . It has a charge

1.(2) A Si wafer is doped with P at 1015 cm-3. It has a charge carrier lifetime of 100 ns. It is at a temperature of 300 K and is illuminated by a laser beam at an optical generation rate of 1019 electron-hole-pairs/(cm3s). What is the steady-state excess hole density? How long does it take for the excess hole density to drop by 10% after the laser beam is switched off?

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