1. (2 pts) Reverse-breakdown voltage = maximum reverse bias a diode can withstand. T/F 2. (2...

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1. (2 pts) Reverse-breakdown voltage = maximum reverse bias a diode can withstand. T/F 2. (2 pts) Avalanche current is the name given to the current that approaches infinite when a forward biased diode has no current limiting. T/F (2 pts) Silicon diodes are preferred for small signals. T/F 3. 4. (2 pts) A Half-Wave Rectifier uses 2 diodes. T / F 5. (2 pts) The depletion region in a diode decreases when a diode is Forward Biased. T/F 6. (2 pts) The typical V, of germanium is: 7. (2 pts) if Fac=2kHz, what is Fripple for a Half-Wave Rectifier 8. (2 pts) if Fac=1kHz, what is Fripple for a Full-Wave Rectifier 9. (2 pts) To create a N-Type material, how many valence electrons should the dopant have? 10. (4pts) In the following circuit, calculate the value of R, given a desired Diode Current of ID1 = 8ma, lo2 = 8ma. V, 22V, Vidi = 1.2V, Vid2 = 2.4v $|1|1 Vs R D1 D2 R= 1. (2 pts) Reverse-breakdown voltage = maximum reverse bias a diode can withstand. T/F 2. (2 pts) Avalanche current is the name given to the current that approaches infinite when a forward biased diode has no current limiting. T/F (2 pts) Silicon diodes are preferred for small signals. T/F 3. 4. (2 pts) A Half-Wave Rectifier uses 2 diodes. T / F 5. (2 pts) The depletion region in a diode decreases when a diode is Forward Biased. T/F 6. (2 pts) The typical V, of germanium is: 7. (2 pts) if Fac=2kHz, what is Fripple for a Half-Wave Rectifier 8. (2 pts) if Fac=1kHz, what is Fripple for a Full-Wave Rectifier 9. (2 pts) To create a N-Type material, how many valence electrons should the dopant have? 10. (4pts) In the following circuit, calculate the value of R, given a desired Diode Current of ID1 = 8ma, lo2 = 8ma. V, 22V, Vidi = 1.2V, Vid2 = 2.4v $|1|1 Vs R D1 D2 R=

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