Question: 1 . At what n - type doping density does the Fermi level enter the conduction band in GaAs and Si at 3 0 0

1. At what n-type doping density does the Fermi level enter the conduction band in GaAs and Si at 300 K? What are the corresponding p-type doping limits for GaAs and Si?
2. Assume that the condition for degeneracy is defined by the relation:
F C >3kT
Calculate the electron concentrations at which the bands are degenerate in GaAs, Si and InAs at room temperature.

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