1) Briefly explain the fabrication step for Ti-sallicide (self-aligned silicidation) sing cross-section. Start from the state...

  

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1) Briefly explain the fabrication step for Ti-sallicide (self-aligned silicidation) sing cross-section. Start from the state below. < Gate oxide Gate polysilicon Field oxide 2) Calculate how many % of the contact resistance from the source/drain junction can be reduced through the silicide process. Source/drain junction acrea is 1m x2m, contact window is 0. 2m x 0. supposed that Specific contact resistance is 2 10-72 cm2 at metal (or silicide)/ silicon contact, and 0.2 10-82 cm2 at metal/ metal (or silicide). Problem 24 The two samples below has a buried layer which doped with phosphorous and antimony. And part of the sample is covered with nitride/oxide stack. With those sample do thermal oxidation, the buried layer diffuses due to high temperature. Draw and briefly explain how the buried layer region changes by diffusion. Hint: phosphorus diffused to interstitial (or interstitialcy mechanism), and antimony diffused to vacancy mechanism. Nitride layer Nitride layer Buried phosphorus layer Buried Antimony layer Silicon substrate Silicon substrate 1) Briefly explain the fabrication step for Ti-sallicide (self-aligned silicidation) sing cross-section. Start from the state below. < Gate oxide Gate polysilicon Field oxide 2) Calculate how many % of the contact resistance from the source/drain junction can be reduced through the silicide process. Source/drain junction acrea is 1m x2m, contact window is 0. 2m x 0. supposed that Specific contact resistance is 2 10-72 cm2 at metal (or silicide)/ silicon contact, and 0.2 10-82 cm2 at metal/ metal (or silicide). Problem 24 The two samples below has a buried layer which doped with phosphorous and antimony. And part of the sample is covered with nitride/oxide stack. With those sample do thermal oxidation, the buried layer diffuses due to high temperature. Draw and briefly explain how the buried layer region changes by diffusion. Hint: phosphorus diffused to interstitial (or interstitialcy mechanism), and antimony diffused to vacancy mechanism. Nitride layer Nitride layer Buried phosphorus layer Buried Antimony layer Silicon substrate Silicon substrate