$1.$ The temperature is $300$ K$,$ and there is a silicon pn junction of

Find the total length $($W$)$ of the built$-$in potential $($bi$)$ depletion region in equilibrium.

$2.$ The temperature is $300$K$,$ and there is a silicon pn junction of

Draw the band diagram $($left type, right n type$)$ when $2$V is applied to this pn junction as a reverse bias, indicate how high the energy barrier is $($eV$)$ for electrons and holes, and draw the quasi Fermi level for electrons and holes in the depletion region. For both neutral regions, $($the difference between Fermi level andindicates also in eV units$)$

$3.$ The temperature is $300$K$,$ and there is a silicon pn junction of

Find above $2)$ when $0\mathrm{.}5$ V is applied to this pn junction as a forward bias

$4.$

$3)$ Find the origin of the junction of the p$-$type and n$-$type $($x$=0)$ and the positions Xp and Xn of the edge of the depletion region in question number $1,$ and find the minimum carrier density of each at Xp and Xn$.$

$5.$

Find the electron and hole density $($n$,)$ at x$=0,$ respectively $($Hint:$,$ use that band diagram is orthogonal as an odd function at x $=0),$ and find how the $$ is many times as many as$.$

$7)$ When drawing the quasi Fermi level in question $3$ above, the straight line without the slope learned from the lecture is $()$ It's a great picture because

With forward bias applied, the current is flowing, and according to question $8$ above, the slope of the quasi Fermi level is

Because it has to exist. Assumewith $0\mathrm{.}5$ V forward bias applied and

at Xp$,$ Xn Findrequired forto flow$($use the unit eV$/$cm$)($At this time, the quasi Fermi level is still used to obtain the $$ value and use$)$