A specimen of p-type silicon is 6 mm in length, 2 mm in width and 1...
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A specimen of p-type silicon is 6 mm in length, 2 mm in width and 1 mm thick. Its electrical resistance is 300 2 measured along the length at room temperature. Assume (а) that the carrier mobilities in silicon room temperature are un = 0.15 m?V's and un = 0.045 m?v's. What is the value of the concentration of carriers in the silicon? (4 marks) A silicon pn diode passes a current of 3 mA under a forward bias of 0.6 V. What is the magnitude of the diode current under a reverse bias of 0.6 V? Assume K = 40 V'. (4 marks) (b) A p-channel depletion mode MOSFET has VT = +3 V. Find the value of Vps beyond which the device is in the saturated region of operation, when VGS = +1 V. (c) (2 marks) (d) Figure 1 shows a simple common-emitter switching circuit, driven from a perfect input square-wave signal VIN of zero source impedance switching between 0 V and +5 V. What is the turn-on time ton of the output signal Vout? The remaining circuit parameters are: Ce = 1.5 pF, Ce = 2.5 pF, VCE(sat) = 0.1 V, VBE(on) = 0.7V, B = 75, transit time T = 0.5 ns, saturation time constant t, = 25 ns. (7 marks) Vcc +5V R. 1.5 k2 Rв 18 k2 +5 V Vout Vin O OV OV Figure 1 A specimen of p-type silicon is 6 mm in length, 2 mm in width and 1 mm thick. Its electrical resistance is 300 2 measured along the length at room temperature. Assume (а) that the carrier mobilities in silicon room temperature are un = 0.15 m?V's and un = 0.045 m?v's. What is the value of the concentration of carriers in the silicon? (4 marks) A silicon pn diode passes a current of 3 mA under a forward bias of 0.6 V. What is the magnitude of the diode current under a reverse bias of 0.6 V? Assume K = 40 V'. (4 marks) (b) A p-channel depletion mode MOSFET has VT = +3 V. Find the value of Vps beyond which the device is in the saturated region of operation, when VGS = +1 V. (c) (2 marks) (d) Figure 1 shows a simple common-emitter switching circuit, driven from a perfect input square-wave signal VIN of zero source impedance switching between 0 V and +5 V. What is the turn-on time ton of the output signal Vout? The remaining circuit parameters are: Ce = 1.5 pF, Ce = 2.5 pF, VCE(sat) = 0.1 V, VBE(on) = 0.7V, B = 75, transit time T = 0.5 ns, saturation time constant t, = 25 ns. (7 marks) Vcc +5V R. 1.5 k2 Rв 18 k2 +5 V Vout Vin O OV OV Figure 1
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Related Book For
Materials Science and Engineering An Introduction
ISBN: 978-0470419977
8th edition
Authors: William D. Callister Jr., David G. Rethwisch
Posted Date:
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