16 Pure Si at 500K has equal number of electron (n) and hole (n.) concentrations of...

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16 Pure Si at 500K has equal number of electron (n) and hole (n.) concentrations of 1.5 10 m. Doping by indium increases n, to 4.5 x 10 m. The doped semiconductor is of (a) n-type with electron concentration n = 5 10 m (b) p-type with electron concentration n = 2.510" m (c) n-type with electron concentration n = 2.5 x 10 m d) p-type having electron concentration n = 5 x 10' m -3 16 Pure Si at 500K has equal number of electron (n) and hole (n.) concentrations of 1.5 10 m. Doping by indium increases n, to 4.5 x 10 m. The doped semiconductor is of (a) n-type with electron concentration n = 5 10 m (b) p-type with electron concentration n = 2.510" m (c) n-type with electron concentration n = 2.5 x 10 m d) p-type having electron concentration n = 5 x 10' m -3

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