Question: 2. Oxidation: An initially bare silicon wafer is oxidized using wet oxidation at 1100 C. A total of 2.4 um of oxide is grown. Please

2. Oxidation: An initially bare silicon wafer is oxidized using wet

2. Oxidation: An initially bare silicon wafer is oxidized using wet oxidation at 1100 C. A total of 2.4 um of oxide is grown. Please find the parabolic rate constant (B) and the linear rate constant (B/A). Then, calculate the time to grow the first 0.8 um of oxide? How long does it take to grow the second 0.8 um of oxide

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