3. A silicon wafer is implanted with phosphorus. The dose is 1015cm2, and the energy is such that the projected range for the implant is 0.2 um and the standard deviation for the implant is 0.05 um. After the implant, the impurity is activated with a 1000 C rapid thermal anneal. Recalling that the flux for diffusion is ) = -Dog and using the diffusion tables from Ch. 3/lectures on diffusion, answer the following: A. What is the net diffusion flux (I) of the phosphorus at the beginning of the anneal at a depth of 0.2 um? Is it toward x = 0 or the other way, or something else? For the direction, explain why. B. What is the net diffusion flux of the phosphorus at the beginning of the anneal at a depth of 300 nm? Is it toward x = 0 or the other way