3.10 For the following process steps, assume that you use a positive photoresist and that etch...
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3.10 For the following process steps, assume that you use a positive photoresist and that etch selectivity is infinite. A composite plot of four photomasks is given in Fig. 3-26. Assume that mask alignment is perfect. All contact sizes are 0.5 x 0.5 um. The poly 1 and poly 2 areas are opaque, and the contact 1 and contact 2 areas are clear in the masks. Draw the cross section at the end of each process step along the cut line shown in the figure. A = 0.5 um Poly 1 mask Poly 2 mask Contact 1 mask Contact 2 mask FIGURE 3-26 (a) Grow 1 um thermal oxide on < 100 > bare Si wafer. (b) Expose and develop photoresist with contact 1 mask. Assume that the resist thickness is 1 um. (c) Etch the 1 um thermal oxide anisotropically. Assume the final oxide profile is perfectly vertical. (d) Remove the photoresist with O2 plasma. (e) Implant phosphorus and anneal. Assume that the final junction depth is 0.3 um. () Deposit 1 um in situ doped poly silicon by LPCVD. The thickness on the sidewalls is the same as that on the flat surface. (g) Expose and develop the photoresist with poly 1 mask. (h) Etch the 1 um poly silicon anisotropically. (1) Remove the photoresist with O2 plasma. ) Deposit 1 um oxide with PECVD. Again, the thickness on the sidewalls is the same as that on the flat surface. (k) Expose and develop photoresist with contact 2 mask. () Etch 0.2 um of the PECVD oxide with HF. Assume the profile is cylindrical as shown in Fig. 3-8a. (m) Etch the remaining 1.8 um oxide anisotropically. (n) Remove the photoresist with O2 plasma. (0) Implant phosphorus and anneal. Assume the junction depth is 0.3 um and there is no additional dopant diffusion. (p) Deposit 1 um in situ doped poly silicon by LPCVD. The thickness on the sidewalls is the same as that on the flat surface. (9) Expose and develop photoresist with poly 2 mask. (r) Etch the 1.0 um poly silicon anisotropically. (s) Remove the photoresist with O2 plasma. (This is just an exercise. The structure does not have any known usefulness.) 3.10 For the following process steps, assume that you use a positive photoresist and that etch selectivity is infinite. A composite plot of four photomasks is given in Fig. 3-26. Assume that mask alignment is perfect. All contact sizes are 0.5 x 0.5 um. The poly 1 and poly 2 areas are opaque, and the contact 1 and contact 2 areas are clear in the masks. Draw the cross section at the end of each process step along the cut line shown in the figure. A = 0.5 um Poly 1 mask Poly 2 mask Contact 1 mask Contact 2 mask FIGURE 3-26 (a) Grow 1 um thermal oxide on < 100 > bare Si wafer. (b) Expose and develop photoresist with contact 1 mask. Assume that the resist thickness is 1 um. (c) Etch the 1 um thermal oxide anisotropically. Assume the final oxide profile is perfectly vertical. (d) Remove the photoresist with O2 plasma. (e) Implant phosphorus and anneal. Assume that the final junction depth is 0.3 um. () Deposit 1 um in situ doped poly silicon by LPCVD. The thickness on the sidewalls is the same as that on the flat surface. (g) Expose and develop the photoresist with poly 1 mask. (h) Etch the 1 um poly silicon anisotropically. (1) Remove the photoresist with O2 plasma. ) Deposit 1 um oxide with PECVD. Again, the thickness on the sidewalls is the same as that on the flat surface. (k) Expose and develop photoresist with contact 2 mask. () Etch 0.2 um of the PECVD oxide with HF. Assume the profile is cylindrical as shown in Fig. 3-8a. (m) Etch the remaining 1.8 um oxide anisotropically. (n) Remove the photoresist with O2 plasma. (0) Implant phosphorus and anneal. Assume the junction depth is 0.3 um and there is no additional dopant diffusion. (p) Deposit 1 um in situ doped poly silicon by LPCVD. The thickness on the sidewalls is the same as that on the flat surface. (9) Expose and develop photoresist with poly 2 mask. (r) Etch the 1.0 um poly silicon anisotropically. (s) Remove the photoresist with O2 plasma. (This is just an exercise. The structure does not have any known usefulness.)
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