Question: 6. For an ion implanted n-p-n transistor, the net impurity doping in the neutral base is N(x) = NAOe -x/l 1018 and l = 0.3

6. For an ion implanted n-p-n transistor, the net impurity doping in the neutral base is N(x) = NAOe -x/l 1018 and l = 0.3 m. (a) Find the total number of impurities in the neutral-base region per unit area. (b) Find the average impurity concentration in the neutral-base region for a neutral-base width of 0.8 m

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