$8\mathrm{.}12.$ An engineer investigating solid$-$phase epitaxial regrowth after amorphizing ion implants of various species $(P,B,Si,Ge,As,Sb$ makes the following observations:

N$-$type dopants of very different size or atomic radius $($e$.$g$.,$ antimony versus phosphorus$)$ show identical regrowth rates, approximately an order of magnitude faster than the regrowth of silicon implanted and amorphized with silicon ions.

P$-$type and N$-$type ion implanted regions have much faster regrowth rates than Si or Ge implanted regions, although they are not identical.

B$-$doped regions compensated with an equal dose of an arsenic implant show identical regrowth rates to Ge implanted and amorphized regions.

Construct a unified physical explanation of all three phenomena, considering possibilities such as size or stress effects, dopant charge or electric field effects, or point$-$defect$-$based effects $($no calculation required$).$