$7\mathrm{.}2$ A tantalum oxide $(T{a}_2{O}_5)$ thin film $($with a dielectric constant of $25)$ was deposited on conductive polysilicon to form a capacitor. Another dielectric material under consideration for this application was $Si{O}_2($with a dielectric constant of $3\mathrm{.}9).$ If the thickness of the $Si{O}_2$ film required to achieve a certain value of capacitance is $d_{\text{s}\text{i}\text{l}\text{i}\text{c}\text{a}},$ what thickness of $T{a}_2{O}_5(d_{T2025})$ will provide the same capacitance per unit area as that for the capacitor made using $Si{O}_2?$