7. [E, None, 3.3.2] Given Table 0.2 ,the goal is to derive the important device parameters from

these data points. As the measured transistor is processed in a deep-submciron technology, the

unified model holds. From the material constants, we also could determine that the saturation voltage VDSAT equals -1V. You may also assume that -2F = -0.6V.

NOTE: The parameter values on Table 3.3 do NOT hold for this problem.

a. Is the measured transistor a PMOS or an NMOS device? Explain your answer.

b. Determine the value of VT0.

c. Determine .

d. Determine .

e. Given the obtained answers, determine for each of the measurements the operation region

of the transistor (choose from cutoff, resistive, saturated, and velocity saturated). Annotate

your finding in the right-most column of the above.

Table 0.2 Measurements taken from the MOS device, at different terminal voltages. VGS Measurement number VDS (V) VSB (V) ID (UA) Operation Region? (V) 1 -2.5 -2.5 0 -84.375 2 1 1 0 0.0 3 -0.7 -0.8 0 -1.04 4 -2.0 -2.5 0 -56.25 5 -2.5 -2.5 - 1 -72.0 6 6 -2.5 -1.5 0 -80.625 7 -2.5 -0.8 0 -66,56