7. Estimate the temperature at which InSb has an electrical conductivity of 3 X 10' (1-m)', assuming the temperature dependence of conductivity has the form o= CT32 exp where k is Boltzmann's constant and is a materials constant. The data in Table 12.2 may prove helpful in determining C for InSb. You may assume that room temperature is approximately 20 C. Table 12.2 Band Gap Energies, Electron and Hole Mobilities, and Intrinsic Electrical Conductivities at Room Temperature for Semiconducting Materials Electrical Band Gap Conductivity Electron Mobility Hole Mobility Material (CV) [(-)1 (m/v) (m/V-8) Elemental SI 1.11 4 X 10** 0.14 0.05 Ge 0.67 2.2 0.38 0.18 III-V Compounds GaP 0.03 0.015 GaAs 1.42 0.85 0.04 lasb 0.17 2 x 10 7.7 0.07 IT-VI Compounds cas 2.40 0.03 ZATO 2.26 0.03 0.01 2.25 10-1