Question: a ) A Si MOSFET made on a p - substrate has N A = 8 1 0 1 4 c m - 3 ,

a) A Si MOSFET made on a p-substrate has NA=81014cm-3, the source and drain are each doped to ND=61019cm-3. Calculate the VDS at which punchthrough would occur. The physical source to drain length of the MOSFET is given to be L=4m. Assume the VT=1.0V and the VG=0.
a ) A Si MOSFET made on a p - substrate has N A =

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