Question: ( a ) Consider a MOS capacitor at T 3 0 0 K with an n - type silicon substrate. Determine the silicon doping concentration

(a) Consider a MOS capacitor at T 300 K with an n-type silicon substrate. Determine
the silicon doping concentration such that Q S D (max)1.25108 C/cm2.
(b) What is the surface potential that results in the maximum space charge width?

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