A germanium p$-$n junction diode has ND $=1016$ cm$3$ on the n$-$side and NA $=1019$ cm$3$ on the p$-$side. Calculate the forward bias voltage at which injected hole concentration at the edge of the depletion region on the n$-$side becomes equal to the majority carrier concentration. Assume T $=300$ K$,$ Dp $=40$ cm$2$s$1,$ p $=1$ ps$.$ Calculate the current density at this voltage and compare with thermal equilibrium diffusion current density $($ni $=2\mathrm{.}51013$ cm$3).$