Question: A MOS capacitor has an n + polysilicon gate with EF = EC + 0 . 1 eV in the polysilicon, a 2 5 nm

A MOS capacitor has an n+ polysilicon gate with EF = EC +0.1eV in the polysilicon, a 25 nm thick SiO2 gate dielectric with Qss =0, and a p-type silicon substrate with Na =21017/cm3. For silicon at room temperature ni =1010/cm3, and Si =11.70,ox =3.90

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