Metal Let's consider an ideal MOS capacitor as shown in the below. p-type doped Si N,...

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Metal Let's consider an ideal MOS capacitor as shown in the below. p-type doped Si N, 5x10cm³ SO, layer (thickness 100A) 11v n, of silicon at RT-1.5x100 cm³. KT at RT 0.0259 eV Dielectric constant of Si=11.8 Dielectric constant of SiO₂-3.9 d-100 A Permittivity of vacuum. - 8.85 × 10-12 C/Vm (a) When VG =0 V (i.e., at equilibrium), please draw the electron energy band diagram throughout position across the above MOS capacitor. (2 points). Please calculate OF = E₁ - EF (in unit of eV) and indicate in your diagram (3 points). (b) When VG =-0.5 V, what is, [Q], the amount of the total charge (per area) stored in the above MOS capacitor? (2 points.) Please draw the electron energy band diagram throughout position across the above MOS capacitor. (3 points). (c) When VG =0.5 V (you can assume that the threshold voltage Vr for this MOS capacitor is higher than 0.5 V.), what is, IQ,l, the amount of the total charge (per area) stored on the semiconductor side of the above MOS capacitor? (2 points.) Please draw the diagram of charge density change p(x) throughout position across the above MOS capacitor structure. (3 points). Metal Let's consider an ideal MOS capacitor as shown in the below. p-type doped Si N, 5x10cm³ SO, layer (thickness 100A) 11v n, of silicon at RT-1.5x100 cm³. KT at RT 0.0259 eV Dielectric constant of Si=11.8 Dielectric constant of SiO₂-3.9 d-100 A Permittivity of vacuum. - 8.85 × 10-12 C/Vm (a) When VG =0 V (i.e., at equilibrium), please draw the electron energy band diagram throughout position across the above MOS capacitor. (2 points). Please calculate OF = E₁ - EF (in unit of eV) and indicate in your diagram (3 points). (b) When VG =-0.5 V, what is, [Q], the amount of the total charge (per area) stored in the above MOS capacitor? (2 points.) Please draw the electron energy band diagram throughout position across the above MOS capacitor. (3 points). (c) When VG =0.5 V (you can assume that the threshold voltage Vr for this MOS capacitor is higher than 0.5 V.), what is, IQ,l, the amount of the total charge (per area) stored on the semiconductor side of the above MOS capacitor? (2 points.) Please draw the diagram of charge density change p(x) throughout position across the above MOS capacitor structure. (3 points).

Answer rating: 100% (QA)

SOLUTION a At equilibrium VG 0 V the electron energy band diagram throughout the MOS capacitor can be drawn as follows The blue lines represent the energy bands of the ptype silicon substrate and the ... View the full answer