A MOS capacitor is fabricated on an n-type substrate having a donor doping density of 5x106...

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A MOS capacitor is fabricated on an n-type substrate having a donor doping density of 5x10¹6 cm-³. i) Discuss and illustrate with a sketch how and why the C-V characteristics change for measurements at high frequencies (>10 kHz). On your sketch, distinguish between the inversion, depletion and accumulation regions. [6 marks] Draw an energy band diagram of the MOS capacitor at depletion and inversion. [5 marks] A MOS capacitor is fabricated on an n-type substrate having a donor doping density of 5x10¹6 cm-³. i) Discuss and illustrate with a sketch how and why the C-V characteristics change for measurements at high frequencies (>10 kHz). On your sketch, distinguish between the inversion, depletion and accumulation regions. [6 marks] Draw an energy band diagram of the MOS capacitor at depletion and inversion. [5 marks] A MOS capacitor is fabricated on an n-type substrate having a donor doping density of 5x10¹6 cm-³. i) Discuss and illustrate with a sketch how and why the C-V characteristics change for measurements at high frequencies (>10 kHz). On your sketch, distinguish between the inversion, depletion and accumulation regions. [6 marks] Draw an energy band diagram of the MOS capacitor at depletion and inversion. [5 marks]