A MOS device has a metal semiconductor work function of $-1\mathrm{.}0$ V $.$ The flat band voltage for this device is $-1\mathrm{.}5$ V $.$ A second device which is twice as large $($in all $3$ dimensions$)$ is made from the exact same materials. Assume the density of trapped charges is the same in both devices. The flat band voltage for this second device will be

A$)-0\mathrm{.}75$ V

B$)-1\mathrm{.}5$ V

C$)-2\mathrm{.}0$ V

D$)-3\mathrm{.}0$ V

E$)-4\mathrm{.}0$ V